Donor-acceptor pair luminescence in nitrogen-doped ZnO films grown on lattice-matched ScAlMgO4 (0001) substrates

被引：92
|
作者：
Tamura, K
Makino, T
Tsukazaki, A
Sumiya, M
Fuke, S
Furumochi, T
Lippmaa, M
Chia, CH
Segawa, Y
Koinuma, H
Kawasaki, M
机构：
[1] RIKEN Inst Phys & Chem Res, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 9800845, Japan
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] Shizuoka Univ, Dept Elect & Elect Engn, Hamamatsu, Shizuoka 4328561, Japan
[4] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[5] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[6] Tohoku Univ, Dept Phys, Aoba Ku, Sendai, Miyagi 9808578, Japan
[7] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
来源：
SOLID STATE COMMUNICATIONS | 2003年 / 127卷 / 04期
关键词：
semiconductors; impurities in semiconductors; optical properties; luminescence; THIN-FILMS; STIMULATED-EMISSION; MULTIQUANTUM WELLS; EPITAXIAL LAYERS; SPECTRA; ENERGY; FABRICATION; SCATTERING; EXCITONS; POLARITY;
D O I：
10.1016/S0038-1098(03)00424-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have grown nitrogen-doped ZnO (ZnO:N) films by laser molecular-beam epitaxy. The use of lattice-matched ScAlMgO4 substrates prevented the degradation of crystallinity induced by the nitrogen incorporation to the films. Despite this improvement, we have not obtained ZnO:N films which showed p-type conductivity. We studied the optical properties of these ZnO:N films. Donor-acceptor pair (DAP) luminescence was observed. The results indicate the formation of an acceptor state. The energy position of the DAP luminescence is lower than that reported by Look et al. [Appl. Phys. Lett. 81 (2002) 1830]. The DAP luminescence band shifts to lower energy with increasing nitrogen concentration. A photoluminescence recombination possibly due to the free-electron-to-acceptor (FA) transition was observed at temperatures higher than 40 K. The acceptor ionization energy was estimated from the energy position of the FA luminescence to be 266 meV. (C) 2003 Elsevier Ltd. All rights reserved.
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收藏
页码：265 / 269
页数：5
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