Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO

被引：157

作者：

Yan, Wensheng

Sun, Zhihu

Liu, Qinghua

Li, Zhongrui

Pan, Zhiyun

Wang, Jie

Wei, Shiqiang ^{[1
]}

Wang, Dan

Zhou, Yingxue

Zhang, Xinyi

机构：

[1] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China

[2] Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China

[3] Fudan Univ, Synchrotron Radiat Res Ctr, Shanghai 200433, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 06期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2769391

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray absorption fine structure (XAFS) and first-principles calculations were employed to study the structure and ferromagnetism origin of Zn0.97Mn0.03O thin film grown by metal organic chemical vapor deposition. The magnetization measurements indicate that this sample is ferromagnetic at room temperature. The Mn ions are located at the substitutional Zn sites as revealed by the Mn K-edge XAFS spectroscopy. Moreover, the O K-edge XAFS analysis indicated the existence of numerous Zn vacancies. Based on first-principles calculations, the authors propose that the Zn vacancy can induce the room-temperature ferromagnetism in Mn-doped ZnO.

引用

页数：3

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