Highly conductive ZnO grown by pulsed laser deposition in pure Ar

被引：40

作者：

Scott, Robin C. ^{[1
]}

Leedy, Kevin D. ^{[2
]}

Bayraktaroglu, Burhan ^{[2
]}

Look, David C. ^{[3
]}

Zhang, Yong-Hang ^{[4
]}

机构：

[1] Arizona State Univ, Sch Mech Aerosp Chem & Mat Engn, Tempe, AZ 85287 USA

[2] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA

[3] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[4] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 07期

基金：

美国国家科学基金会;

关键词：

annealing; electrical resistivity; elemental semiconductors; gallium; II-VI semiconductors; infrared spectra; pulsed laser deposition; semiconductor growth; semiconductor thin films; visible spectra; wide band gap semiconductors; zinc compounds; THIN-FILMS; TRANSPARENT; AL;

D O I：

10.1063/1.3481372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga-doped ZnO was deposited by pulsed laser deposition at 200 degrees C on SiO(2)/Si, Al(2)O(3), or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8x10(-4) cm, three-times lower than that of films deposited at 200 degrees C in 10 mTorr of O(2) followed by an anneal at 400 degrees C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions. (C) 2010 American Institute of Physics. [doi:10.1063/1.3481372]

引用

页数：3

共 9 条

[1] High temperature stability of postgrowth annealed transparent and conductive ZnO:Al films [J].

Bayraktaroglu, Burhan ;

Leedy, Kevin ;

Bedford, Robert .

APPLIED PHYSICS LETTERS, 2008, 93 (02)

[2] Electrical, optical and structural properties of transparent and conducting ZnO thin films doped with Al and F by rf magnetron sputter [J].

Choi, BG ;

Kim, IH ;

Kim, DH ;

Lee, KS ;

Lee, TS ;

Cheong, B ;

Baik, YJ ;

Kim, WM .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2005, 25 (12) :2161-2165

[3] Influence of thermal annealing ambient on Ga-doped ZnO thin films [J].

Du Ahn, Byung ;

Oh, Sang Hoon ;

Lee, Choong Hee ;

Kim, Gun Hee ;

Kim, Hyun Jae ;

Lee, Sang Yeol .

JOURNAL OF CRYSTAL GROWTH, 2007, 309 (02) :128-133

[4] Mobility analysis of highly conducting thin films: Application to ZnO [J].

Look, D. C. ;

Leedy, K. D. ;

Tomich, D. H. ;

Bayraktaroglu, B. .

APPLIED PHYSICS LETTERS, 2010, 96 (06)

[5]

Look D.C., 2010, Mater. Res. Soc. Symp. Proc, V1201, P35

[6] Pulsed-laser deposition of ZnO and related compound thin films for optoelectronics [J].

Millon, Eric ;

Perriere, Jacques ;

Tricot, Sylvain ;

Boulmer-Leborgne, Chantal .

HIGH-POWER LASER ABLATION VII, PTS 1-2, 2008, 7005

[7] Investigation of transparent conductive oxide Al-doped ZnO films produced by pulsed laser deposition [J].

Park, SM ;

Ikegami, T ;

Ebihara, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (11) :8027-8031

[8] Effects of oxygen pressure on n-ZnO/p-Si heterojunctions fabricated using pulsed laser deposition - Discussion [J].

Qi, Hongxia ;

Li, Qingshan ;

Wang, Caifeng ;

Zhang, Lichun ;

Lv, Lei .

VACUUM, 2007, 81 (08) :943-946

[9] Effects of annealing on structure, resistivity and transmittance of Ga doped ZnO films [J].

Yim, K. ;

Kim, H. W. ;

Lee, C. .

MATERIALS SCIENCE AND TECHNOLOGY, 2007, 23 (01) :108-112

← 1 →