An Indirect Matrix Converter based 97%-efficiency On-board Level 2 Battery Charger Using E-mode GaN HEMTs

被引:0
|
作者
Lu, Juncheng [1 ]
Tian, Qi [1 ]
Bai, Kevin [1 ]
Brown, Alan [2 ]
McAmmond, Matt [2 ]
机构
[1] Kettering Univ, Dept Elect & Comp Engn, Flint, MI 48504 USA
[2] Hella Corp Ctr USA Inc, Plymouth Twp, MI 48170 USA
来源
WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS | 2015年
关键词
Gallium Nitride; High Electron Mobility Transistor; Battery Charger; Electric Vehicle; Matrix Converter; Wide-bandgap Semiconductor; Zero Voltage Switching;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Most of the present EV on-board chargers utilize a three-stage design, e.g., AC/DC rectifier, DC to high-frequency AC inverter, and AC to DC rectifier, which limits the wall-to battery efficiency to similar to 94%. Instead of using the regular three stage design, a matrix converter could directly convert grid AC to high-frequency AC thereby saves one stage and potentially increases the system efficiency, however, the control will be more complex and the high cost of building the back-to-back switches is inevitable. This paper adopts the 650V E-mode GaN HEMTs to build a level-2 on-board charger. The input voltage is 80 similar to 260VAC, the battery voltage is 200 similar to 500VDC and the rated power is 7.2kW with the bidirectional power-flow capability. Such design saves the bulky DC-bus capacitor. Variable switching frequency is combined with phase-shift control to realize the zero-voltage switching An active filter is employed to choke the 120Hz output current ripple if needed. To further increase the system efficiency, four GaN HEMTs arc paralleled to form one switching module. The overall system efficiency is >97% and the power density is 2.5kW/L with the active filter and 3.3kW/L without the active filter.
引用
收藏
页码:351 / 358
页数:8
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