Growth of Topological Insulator Bi2Te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

被引：37

作者：

Liu, H. W. ^{[1
]}

Yuan, H. T. ^{[2
,3
]}

Fukui, N. ^{[1
]}

Zhang, L. ^{[1
]}

Jia, J. F. ^{[4
]}

Iwasa, Y. ^{[2
,3
]}

Chen, M. W. ^{[1
]}

Hashizume, T. ^{[1
,5
,6
]}

Sakurai, T. ^{[1
]}

Xue, Q. K. ^{[1
,4
]}

机构：

[1] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Univ Tokyo, Quantum Phase Elect Ctr, Tokyo 1138656, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

[5] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 3500395, Japan

[6] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

来源：

CRYSTAL GROWTH & DESIGN | 2010年 / 10卷 / 10期

基金：

中国国家自然科学基金;

关键词：

RAMAN;

D O I：

10.1021/cg1007457

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The molecular beam epitaxy growth of topological insulator Bi2Te3 thin films on Si(111) substrates has been investigated in situ by low-energy electron microscopy. The crystal structure and surface morphology during growth were directly revealed, which enables us to identify the optimal growth conditions for single crystalline Bi2Te3 films. The formation of thin films is preceded by several surface structures, including a wetting layer and a Te/Bi-terminated Si(111)-1 x 1 reconstruction. Raman scattering spectra and A FM measurements indicate that, under Te-rich conditions, single crystalline films of Bi2Te3 grow along the [111] direction in a layer-by-layer mode. Transport measurements prove the insulating behavior of the films grown in this way.

引用

页码：4491 / 4493

页数：3

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