High-field electron mobility in biaxially-tensile strained SOI: Low temperature measurement and correlation with the surface morphology

被引：22

作者：

Bonno, O. ^{[1
]}

Barraud, S. ^{[1
]}

Andrieu, F. ^{[1
]}

Mariolle, D. ^{[1
]}

Rochette, F. ^{[1
]}

Casse, M. ^{[1
]}

Hartmann, J. M. ^{[1
]}

Bertin, F. ^{[1
]}

Faynot, O. ^{[1
]}

机构：

[1] CEA, LETI Minatec, F-38054 Grenoble, France

来源：

2007 Symposium on VLSI Technology, Digest of Technical Papers | 2007年

关键词：

D O I：

10.1109/VLSIT.2007.4339757

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high field mobility enhancement in sSOI devices is still unexplained as for now. This work proposes an experimental and theoretical investigation of the physical mechanisms responsible for such a gain. For the first time, we show by Atomic Force Microscopy (AFM) measurements that the surface roughness of sSi is drastically reduced compared to unstrained Si. Introduced into a Kubo-Greenwood model, this improved roughness perfectly reproduces the experimental mobility enhancement at high effective fields (>= 1 MV/cm) for a wide range of temperature (50K-300K).

引用

页码：134 / 135

页数：2

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