Extracting transport parameters in GaAs nanopillars grown by selective-area epitaxy

被引：20

作者：

Lin, Andrew ^{[1
]}

Shapiro, Joshua N. ^{[1
]}

Senanayake, Pradeep N. ^{[1
]}

Scofield, Adam C. ^{[1
]}

Wong, Ping-Show ^{[1
]}

Liang, Baolai ^{[2
]}

Huffaker, Diana L. ^{[1
,2
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Calif Nanosyst Inst, Los Angeles, CA 90095 USA

来源：

NANOTECHNOLOGY | 2012年 / 23卷 / 10期

基金：

美国国家科学基金会;

关键词：

NANOWIRES; PHOTOLUMINESCENCE; PASSIVATION; SURFACES; SILICON;

D O I：

10.1088/0957-4484/23/10/105701

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate the transport properties in p-type GaAs nanopillars (NPs) grown on GaAs(111) B substrates using selective-area epitaxy by studying single-NP field-effect transistors. Experimental results indicate that normalized resistance and field-effect mobility are highly sensitive to NP dimensions. Both in situ and ex situ chemical surface passivation techniques are found to significantly improve conductivity and mobility, especially for the smaller diameter NPs. A semi-empirical model based on diameter dependent mobility is used to extract actual doping levels and surface state density by fitting normalized resistance as a function of NP diameter. Surface state densities before and after passivation are found to be 5 x 10(12) cm(-2) eV(-1) and 7 x 10(10) cm(-2) eV(-1), respectively.

引用

页数：5

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