Extracting transport parameters in GaAs nanopillars grown by selective-area epitaxy

被引：20
作者：
Lin, Andrew [1 ]
Shapiro, Joshua N. [1 ]
Senanayake, Pradeep N. [1 ]
Scofield, Adam C. [1 ]
Wong, Ping-Show [1 ]
Liang, Baolai [2 ]
Huffaker, Diana L. [1 ,2 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Univ Calif Los Angeles, Calif Nanosyst Inst, Los Angeles, CA 90095 USA
来源：
NANOTECHNOLOGY | 2012年 / 23卷 / 10期
基金：
美国国家科学基金会;
关键词：
NANOWIRES; PHOTOLUMINESCENCE; PASSIVATION; SURFACES; SILICON;
D O I：
10.1088/0957-4484/23/10/105701
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigate the transport properties in p-type GaAs nanopillars (NPs) grown on GaAs(111) B substrates using selective-area epitaxy by studying single-NP field-effect transistors. Experimental results indicate that normalized resistance and field-effect mobility are highly sensitive to NP dimensions. Both in situ and ex situ chemical surface passivation techniques are found to significantly improve conductivity and mobility, especially for the smaller diameter NPs. A semi-empirical model based on diameter dependent mobility is used to extract actual doping levels and surface state density by fitting normalized resistance as a function of NP diameter. Surface state densities before and after passivation are found to be 5 x 10(12) cm(-2) eV(-1) and 7 x 10(10) cm(-2) eV(-1), respectively.
引用
收藏
页数：5
相关论文
共 50 条
  • [21] Selective Area Epitaxy of GaAs Microstructures by Close-Spaced Vapor Transport for Solar Energy Conversion Applications
    Greenaway, Ann L.
    Sharps, Meredith C.
    Boucher, Jason W.
    Strange, Lyndi E.
    Kast, Matthew G.
    Alon, Shaul
    Boettcher, Shannon W.
    ACS ENERGY LETTERS, 2016, 1 (02): : 402 - 408
  • [22] Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices
    Zendrini, Michele
    Dubrovskii, Vladimir
    Rudra, Alok
    Dede, Didem
    Morral, Anna Fontcuberta i
    Piazza, Valerio
    ACS APPLIED NANO MATERIALS, 2024, 7 (16) : 19065 - 19074
  • [23] Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
    Deura, Momoko
    Hoshii, Takuya
    Yamamoto, Takahisa
    Ikuhara, Yuichi
    Takenaka, Mitsuru
    Takagi, Shinichi
    Nakano, Yoshiaki
    Sugiyama, Masakazu
    APPLIED PHYSICS EXPRESS, 2009, 2 (01) : 0111011 - 0111013
  • [24] Selective-area growth of GaAs and InAs nanowires-homo- and heteroepitaxy using SiNx templates
    Paetzelt, H.
    Gottschalch, V.
    Bauer, J.
    Benndorf, G.
    Wagner, G.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 5093 - 5097
  • [25] Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy
    Chereau, Emmanuel
    Dubrovskii, Vladimir G.
    Gregoire, Gabin
    Avit, Geoffrey
    Staudinger, Philipp
    Schmid, Heinz
    Bougerol, Catherine
    Coulon, Pierre-Marie
    Shields, Philip A.
    Trassoudaine, Agnes
    Gil, Evelyne
    LaPierre, Ray R.
    Andre, Yamina
    CRYSTAL GROWTH & DESIGN, 2023, 23 (06) : 4401 - 4409
  • [26] Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
    Gao, Qian
    Saxena, Dhruv
    Wang, Fan
    Fu, Lan
    Mokkapati, Sudha
    Guo, Yanan
    Li, Li
    Wong-Leung, Jennifer
    Caroff, Philippe
    Tan, Hark Hoe
    Jagadish, Chennupati
    NANO LETTERS, 2014, 14 (09) : 5206 - 5211
  • [27] Orientation-Controlled Selective-Area Epitaxy of III-V Nanowires on (001) Silicon for Silicon Photonics
    Chang, Ting-Yuan
    Kim, Hyunseok
    Zutter, Brian T.
    Lee, Wook-Jae
    Regan, Brian C.
    Huffaker, Diana L.
    ADVANCED FUNCTIONAL MATERIALS, 2020, 30 (30)
  • [28] Selective-Area Metal Organic Vapor-Phase Epitaxy of InGaAs/InP Heterostrucures On Si For Advanced CMOS Devices
    Merckling, C.
    Waldron, N.
    Jiang, S.
    Guo, W.
    Ryan, P.
    Collaert, N.
    Caymax, M.
    Barla, K.
    Heyns, M.
    Thean, A.
    Vandervorst, W.
    DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 2014, 61 (02): : 107 - 112
  • [29] Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy
    Kohashi, Yoshinori
    Sato, Takuya
    Ikejiri, Keitaro
    Tomioka, Katsuhiro
    Hara, Shinjiroh
    Motohisa, Junichi
    JOURNAL OF CRYSTAL GROWTH, 2012, 338 (01) : 47 - 51
  • [30] Selective-Area Growth and Electrical Characterization of Hybrid Structures between Semiconducting GaAs Nanowires and Ferromagnetic MnAs Nanoclusters
    Hara, Shinjiro
    Sakita, Shinya
    Yatago, Masatoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (11)
12345