Reflectance and electroreflectance of MBE grown GaN layers

被引：0

作者：

Shokhovets, SV

Goldhahn, R

Gobsch, G

Cheng, TS

Foxon, CT

机构：

来源：

PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEW AND SHORT NOTES TO NANOMEETING '97 | 1997年

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Refractive index of GaN has been obtained by fitting experimental reflectivity of GaN layers grown on (lit) GaAs substrates. The linear electro-optic Pockels effect has been found to determine an electroreflectance of the films below the band gap.

引用

页码：87 / 90

页数：4