Exciton Character and High-Performance Stimulated Emission of Hybrid Lead Bromide Perovskite Polycrystalline Film

被引:23
|
作者
Shi, Jiangjian [1 ]
Li, Yiming [1 ,2 ]
Wu, Jionghua [1 ,2 ]
Wu, Huijue [1 ]
Luo, Yanhong [1 ,2 ]
Li, Dongmei [1 ,2 ]
Jasieniak, Jacek J. [3 ]
Meng, Qingbo [1 ,4 ]
机构
[1] Chinese Acad Sci, Key Lab Renewable Energy, Beijing Key Lab New Energy Mat & Devices, Inst Phys, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Dept Phys Sci, Beijing 100049, Peoples R China
[3] Monash Univ, ARC Ctr Excellence Exciton Sci, Dept Mat Sci & Engn, Clayton, Vic 3800, Australia
[4] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
electronic states; excitons; hybrid perovskites; stimulated emission; EXCITATION-POWER DEPENDENCE; LIGHT-EMITTING-DIODES; HALIDE PEROVSKITES; NANOWIRE LASERS; PHOTOLUMINESCENCE; BANDGAP; LENGTHS; GAIN;
D O I
10.1002/adom.201902026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electronic states of hybrid perovskites enable their exceptional optoelectronic applications. Herein, through heterojunction enhanced exciton dissociation and global tracing of multiple radiative electronic states across wide temperature regions, it has been found that excitons while not free carriers dominate the bandedge photoelectric properties of hybrid lead bromide perovskite (MAPbBr(3)). MAPbBr(3) has exhibited two types of excitons with giant binding energies and superior phase stability. A bound exciton (BE) has been clearly confirmed according to a saturated photo-induced bleaching behavior and a correlation of the exciton to the perovskite deep trap state. By stabilizing the excitonic phase of polycrystalline MAPbBr(3), impressively low-threshold and high-gain stimulated emission from the BE has been realized at room temperature. Overall, this work provides new insight into the photophysics characteristics of the hybrid perovskite and more importantly brings huge opportunities for exploiting perovskite excitonic mechanism to realize more abundant optoelectronic applications.
引用
收藏
页数:11
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