Investigation on carrier injection tailoring and electroluminescence of WSe2 quantum dots in light-emitting diodes

被引:6
|
作者
Liu, Yuwei [1 ]
Zeng, Liya [1 ]
Wu, Danni [1 ]
Xue, Xiaogang [1 ]
Cai, Ping [1 ]
Zhang, Xiaowen [1 ]
机构
[1] Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
基金
中国国家自然科学基金;
关键词
WSe2 quantum dots; Light-emitting diodes; Carrier injection; Electroluminescence; Ultraviolet emission; HOLE INJECTION; TUNABLE PHOTOLUMINESCENCE; DICHALCOGENIDES; PERFORMANCES;
D O I
10.1016/j.optmat.2022.113116
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
WSe2 quantum dots (QDs) with exceptional properties are facilely synthesized with liquid phase exfoliation and hydrothermal reaction, and characterized with scanning electron microscope, atomic force microscope, trans-mission electron microscope and X-ray photoelectron spectroscopy. The WSe2 QDs show good film morphology and effective carrier injection tailoring. Using 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole as emitter, the near ultraviolet organic light-emitting diodes (NUV OLEDs) show maximum radiance of 1.25 mW/cm2 and external quantum efficiency (EQE) of 0.48% in inverted device with WSe2 QDs tailoring electron injection. The corresponding normal UV OLEDs show maximum radiance of 1.82 mW/cm2 and EQE of 1.39% with WSe2 QDs tailoring hole injection. Impedance spectroscopy analysis clarifies carrier injection tunability of WSe2 QDs. LEDs using WSe2 QDs as emitter are pioneeringly fabricated, showing maximum luminance of 426 cd/m2, EQE of 0.39%, luminous efficiency of 0.3 cd/A, power efficiency of 0.13 lm/W, and voltage dependent electrolumi-nescent spectra. Ours results pave an alternative approach for interface modification, developing novel WSe2 QDs emitters, and boosting WSe2 QDs applications.
引用
收藏
页数:9
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