Effect of Annealing on the Electrical Properties of CuxS Thin Films

被引：30

作者：

Sabah, Fayroz A. ^{[1
,2
]}

Ahmed, Naser M. ^{[1
]}

Hassan, Z. ^{[1
]}

Rasheed, Hiba S. ^{[1
,3
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Inst Nanooptoelect Res & Technol INOR, George Town 11800, Malaysia

[2] Al Mustansiriya Univ, Coll Engn, Dept Elect Engn, Baghdad, Iraq

[3] Al Mustansiriya Univ, Coll Educ, Dept Phys, Baghdad, Iraq

来源：

5TH INTERNATIONAL CONFERENCE ON RECENT ADVANCES IN MATERIALS, MINERALS AND ENVIRONMENT (RAMM) & 2ND INTERNATIONAL POSTGRADUATE CONFERENCE ON MATERIALS, MINERAL AND POLYMER (MAMIP) | 2016年 / 19卷

关键词：

CuS; annealing; p-type thin film;

D O I：

10.1016/j.proche.2016.03.005

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

Copper sulphide CuS was deposited on three substrates; glass, Indium Tin Oxide (ITO) and Ti by using spray pyrolysis deposition (SPD). After depositing CuS thin films on the substrates at 200 degrees C, they were annealed at 50, 100, 150, and 200 degrees C for 1 hour. Structural measurements revealed covellite CuS and chalcocite Cu2S phases for thin films before and after annealing at 200 degrees C with changes in intensities, and only covellite CuS phase for thin films after annealing at 50, 100, and 150 degrees C. Morphological characteristics show hexagonal-cubic crystals for the CuS thin film deposited on glass substrate and plates structures for films deposited on ITO and Ti substrates before annealing, these crystals became bigger in size and there were be oxidation and some agglomerations in some regions with formation of plates for CuS on glass substrate after annealing at 200 degrees C. For Hall Effect measurements, thin films sheet resistivity and mobility increased after annealing while the carrier concentration decreased. Generally, the thin film deposited on ITO substrate had the lowest resistivity and the highest carrier concentration before and after annealing. The thin film deposited on Ti substrate had the highest mobility before and after annealing, which makes it the best thin film for device performance. The objective of this research is to show the improvement of thin films electrical properties especially the mobility after annealing those thin films. (C) 2016 The Authors. Published by Elsevier B.V.

引用

页码：15 / 20

页数：6

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