A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology

被引：2

作者：

Li, Shaojun ^{[1
]}

Lv, Hongliang ^{[1
]}

Zhang, Yimen ^{[1
]}

Zhang, Yuming ^{[1
]}

Wu, Yue ^{[1
]}

Asif, Muhammad ^{[2
]}

机构：

[1] Xidian Univ, Sch Microelect, 2 Taibai Rd, Xian 710071, Shaanxi, Peoples R China

[2] Qurtuba Univ Sci & IT, D I Kpk 29050, Pakistan

来源：

IEICE ELECTRONICS EXPRESS | 2018年 / 15卷 / 23期

关键词：

gallium arsenide; high-speed sampling; track-and-hold; non-linear distortion; Schottky diodes; MMICs;

D O I：

10.1587/eIex.15.20180946

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high linearity full differential 8 GSa/s track-and-hold amplifier (THA) is presented in this paper. The proposed THA is designed and implemented using 2-mu m GaAs HBT technology to be targeted for faster operation in sampling systems at a clock frequency of GHz. In this THA, an alternative switch emitter follower (SEF) is used as a switching stage with a Schottky diode for hold-mode isolation enhancement and high-speed operation. In conjunction with well-designed input buffer allows us to achieve high linearity and comparable dynamic performance. Measured small signal -3 dB bandwidth, and hold-mode isolation are better than 3.6 GHz and 40 dB, respectively. The prototype achieves a spurious-free dynamic range (SFDR) of 43.9 dB at 0.5 GHz and an average total harmonic distortion (THD) below -40 dBc up to a first Nyquist frequency of 4 GHz. This work has the potential for wideband, high speed and low distortion analog to digital converter (ADC) used in the future direct sampling systems.

引用

页数：10

共 14 条

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