Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications

被引：37

作者：

Abrutis, Adulfas ^{[1
]}

Plausinaitiene, Valentina ^{[1
]}

Skapas, Martynas ^{[1
]}

Wiemer, Claudia ^{[2
]}

Salicio, Olivier ^{[2
]}

Pirovano, Agostino ^{[3
]}

Varesi, Enrico ^{[3
]}

Rushworth, Simon ^{[4
]}

Gawelda, Wojciech ^{[5
]}

Siegel, Jan ^{[5
]}

机构：

[1] Vilnius State Univ, Dept Gen & Inorgan Chem, LT-03225 Vilnius, Lithuania

[2] CNR INFM, MDM Lab, I-20041 Agrate Brianza, Italy

[3] STMicroelect M6, I-20041 Agrate Brianza, Italy

[4] SAFC HiTech, Wirral CH62 3QF, Merseyside, England

[5] CSIC, Laser Proc Grp, Inst Opt, E-28006 Madrid, Spain

来源：

CHEMISTRY OF MATERIALS | 2008年 / 20卷 / 11期

关键词：

D O I：

10.1021/cm8004584

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The successful growth of chalcogenide films with required functional properties for PCM (phase change memory) by the combination of hot-wire MOCVD and pulsed liquid injection, was reported. Ge(NMe2)4, Sb(NMe2)3, and Te(i-Pr)2 precursors were used for GST depositions. additional optimization of deposition conditions was made in order to decrease the crystallites size and surface roughness of GST films. Smaller crystallites and smoother films were obtained at higher distance between the hot wire and substrate and by adjusting the structure of precursor injection cycle, the pressure, and gas flow rate. The CVD GST emerged as an appealing technology that can enable he development of high aspect-ratio PCM cells with improved programming characteristics.

引用

页码：3557 / 3559

页数：3

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