Influence of negative pressure on thermoelectric properties of Sb2Te3

被引：23

作者：

Thonhauser, T ^{[1
]}

机构：

[1] Penn State Univ, Dept Phys, Davey Lab 104, University Pk, PA 16802 USA

来源：

SOLID STATE COMMUNICATIONS | 2004年 / 129卷 / 04期

基金：

美国国家科学基金会;

关键词：

semiconductors; electronic transport; strain; high pressure;

D O I：

10.1016/j.ssc.2003.10.006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigated the influence of negative pressure on the electrical conductivity, the Seebeck coefficient, and the power factor of Sb2Te3. We performed first-principles calculations with the linearized-augmented plane-wave method considering negative hydrostatic pressure in the range from zero to -2 GPa and doping for electrons and holes up to 10(20) cm(-3). Our results predict a significant increase of the Seebeck coefficient and the power factor under negative pressure for certain doping concentrations. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：249 / 253

页数：5

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