Magnetoresistance in magnetic tunnel junctions with amorphous electrodes

被引：1

作者：

Nakajima, K ^{[1
]}

Feng, G ^{[1
]}

Coey, JMD ^{[1
]}

机构：

[1] Univ Dublin Trinity Coll, Dept Phys, SFI Trinity Nanosci Lab, Dublin 2, Ireland

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2005年 / 41卷 / 10期

关键词：

amorphous; MTJ; spin-dependent tunneling;

D O I：

10.1109/TMAG.2005.854717

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Magnetic tunnel junctions (MTJs) with amorphous CoFeB and Co2MnSi electrodes were fabricated and examined. In the case of [Co90Fe10](100-x)B-x, the x = 32% boron addition reduces the magnetization by 30% compared to Co90Fe10, yet the reduction of the tunnel magnetoresistance (TMR) is over 95%. On the contrary, in the case of Co(100-x-y)MnxSiy, although net magnetization is very small at room temperature, the TMR can be as large as 7%. The character of each metalloid (boron and silicon) could be responsible for the peculiar behavior to each system.

引用

页码：2609 / 2611

页数：3

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