Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

被引:57
作者
Wang, XL
Wang, CM
Hu, GX
Wang, JX
Chen, TS
Jiao, G
Li, JP
Zeng, YP
Li, JM
机构
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] Nanjing Elect Devices Inst, Nanjing 210016, Peoples R China
关键词
HEMT; GaN; MOCVD; power device;
D O I
10.1016/j.sse.2005.06.022
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-quality AlGaN/GaN high electron mobility transistor (HEMT) structures were grown by metalorganic chemical vapor deposition (MOCVD) on 2-in. sapphire substrates. Two-dimensional electron gas (2DEG) mobility of 1410 cm(2)/Vs and concentration of 1.0X10(13) CM-2 are obtained at 295 K from the HEMT structures, whose average sheet resistance and sheet resistance uniformity are measured to be about 395 Omega/sq and 96.65% on 2-in. wafers, respectively. AlGaN/GaN HEMTs with 0.8 mu m gate length and 0.2 mm gate width were fabricated and characterized using the grown HEMT structures. Maximum current density of 0.9 A/ mm, peak extrinsic transconductance of 290 mS/mm, unity cutoff frequency (f(T)) of 20 GHz and maximum oscillation frequency (f(max) of 46 GHz are achieved. These results represent significant improvements over the previously fabricated devices with the same gate length, which are attributed to the improved performances of the MOCVD-grown HEMT structures. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1387 / 1390
页数:4
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