High-quality AlGaN/GaN high electron mobility transistor (HEMT) structures were grown by metalorganic chemical vapor deposition (MOCVD) on 2-in. sapphire substrates. Two-dimensional electron gas (2DEG) mobility of 1410 cm(2)/Vs and concentration of 1.0X10(13) CM-2 are obtained at 295 K from the HEMT structures, whose average sheet resistance and sheet resistance uniformity are measured to be about 395 Omega/sq and 96.65% on 2-in. wafers, respectively. AlGaN/GaN HEMTs with 0.8 mu m gate length and 0.2 mm gate width were fabricated and characterized using the grown HEMT structures. Maximum current density of 0.9 A/ mm, peak extrinsic transconductance of 290 mS/mm, unity cutoff frequency (f(T)) of 20 GHz and maximum oscillation frequency (f(max) of 46 GHz are achieved. These results represent significant improvements over the previously fabricated devices with the same gate length, which are attributed to the improved performances of the MOCVD-grown HEMT structures. (c) 2005 Elsevier Ltd. All rights reserved.
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Univ Calif Santa Barbara, Dept Elect & Comp Engn 1, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn 1, Santa Barbara, CA 93106 USA
Mishra, UK
;
Parikh, P
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机构:Univ Calif Santa Barbara, Dept Elect & Comp Engn 1, Santa Barbara, CA 93106 USA
Parikh, P
;
Wu, YF
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机构:Univ Calif Santa Barbara, Dept Elect & Comp Engn 1, Santa Barbara, CA 93106 USA
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Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
Vetury, R
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Zhang, NQQ
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Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
Zhang, NQQ
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Keller, S
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Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
Keller, S
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Mishra, UK
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Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
机构:
Univ Calif Santa Barbara, Dept Elect & Comp Engn 1, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn 1, Santa Barbara, CA 93106 USA
Mishra, UK
;
Parikh, P
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机构:Univ Calif Santa Barbara, Dept Elect & Comp Engn 1, Santa Barbara, CA 93106 USA
Parikh, P
;
Wu, YF
论文数: 0引用数: 0
h-index: 0
机构:Univ Calif Santa Barbara, Dept Elect & Comp Engn 1, Santa Barbara, CA 93106 USA
机构:
Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
Vetury, R
;
Zhang, NQQ
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h-index: 0
机构:
Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
Zhang, NQQ
;
Keller, S
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机构:
Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
Keller, S
;
Mishra, UK
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机构:
Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA