Long-wavelength HgCdTe negative luminescent devices

被引：21

作者：

Ashley, T

Gordon, NT

Nash, GR

Jones, CL

Maxey, CD

Catchpole, RA

机构：

[1] QinetiQ, Malvern WR14 3PS, Worcs, England

[2] Bae Syst, Southampton SO15 0EG, Hants, England

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 08期

关键词：

D O I：

10.1063/1.1395521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the negative luminescent properties of a HgCdTe device, fabricated from a 1 mm diameter array of photodiodes having peak emission at a wavelength of 8.5 mum. This long-wavelength luminescence is of sufficient efficiency and area to be useful in device applications. (C) 2001 American Institute of Physics.

引用

收藏

页码：1136 / 1138

页数：3

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