Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application

被引：38

作者：

Ginnaram, Sreekanth ^{[1
]}

Qiu, Jiantai Timothy ^{[2
,3
]}

Maikap, Siddheswar ^{[1
,3
]}

机构：

[1] Chang Gung Univ CGU, Dept Elect Engn, Taoyuan 33302, Taiwan

[2] Chang Gung Univ CGU, Dept Biomed Sci, Taoyuan 33302, Taiwan

[3] Chang Gung Mem Hosp CGMH, Dept Obstet & Gynecol, Taoyuan 333, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 05期

关键词：

High-performance; MoS2; Hf/Si interfacial layer; CBRAM; non-volatile memory; artificial synapse; MOS2; MEMRISTOR; DEVICE; OXIDE;

D O I：

10.1109/LED.2020.2980625

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we demonstrate the key role of the Hf/Si interfacial layer (IL) in Al/Cu/IL/MoS2/TiN conductive bridge RAM. Owing to controlling Cu migration through Hf rather than Si, the Hf interface device offers consecutive >4000 DC cycles and long program/erase (P/E) endurance of>2x 10(9) cycles under the lowcurrent operation of 100 mu A at the fast switching speed of 100 ns. The Hf interface device shows gradual RESET, long-term potentiation/depression (LTP/LTD) pulses of 40/100 with small pulse width of 100 ns and a low power consumption of <13 pJ is needed for artificial synapse applications.

引用

页码：709 / 712

页数：4

共 32 条

[1]

[Anonymous], 2015, IEEE INT EL DEV M IE, DOI DOI 10.1109/IEDM.2015.7409628

[2] Engineering of defects in resistive random access memory devices [J].

Banerjee, Writam ;

Liu, Qi ;

Hwang, Hyunsang .

JOURNAL OF APPLIED PHYSICS, 2020, 127 (05)

[3] Quantized Conduction Device with 6-Bit Storage Based on Electrically Controllable Break Junctions [J].

Banerjee, Writam ;

Hwang, Hyunsang .

ADVANCED ELECTRONIC MATERIALS, 2019, 5 (12)

[4] Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices [J].

Banerjee, Writam ;

Liu, Qi ;

Lv, Hangbing ;

Long, Shibing ;

Liu, Ming .

NANOSCALE, 2017, 9 (38) :14442-14450

[5] Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM [J].

Belmonte, A. ;

Celano, U. ;

Degraeve, R. ;

Fantini, A. ;

Redolfi, A. ;

Vandervorst, W. ;

Houssa, M. ;

Jurczak, M. ;

Goux, L. .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (08) :775-777

[6] A Study of Gamma-Ray Exposure of Cu-SiO2 Programmable Metallization Cells [J].

Chen, W. ;

Barnaby, H. J. ;

Kozicki, M. N. ;

Edwards, A. H. ;

Gonzalez-Velo, Y. ;

Fang, R. ;

Holbert, K. E. ;

Yu, S. ;

Yu, W. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) :2404-2411

[7] Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets [J].

Cheng, Peifu ;

Sun, Kai ;

Hu, Yun Hang .

NANO LETTERS, 2016, 16 (01) :572-576

[8]

Dean J.A., 2001, Lange's Handbook of Chemistry, V15

[9] Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiNxOy/TiN [J].

Dutta, Mrinmoy ;

Maikap, Siddheswar ;

Qiu, Jiantai Timothy .

ADVANCED ELECTRONIC MATERIALS, 2019, 5 (02)

[10]

Guy J, 2014, INT EL DEVICES MEET

← 1 2 3 4 →