Gap state spectroscopy in Se-based amorphous semiconductors

被引：0
|
作者：
Mikla, V. I. [1 ]
Mikla, V. V. [1 ]
机构：
[1] Uzhgorod Natl Univ, Inst Solid State Phys & Chem, UA-88000 Uzhgorod, Ukraine
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2008年 / 10卷 / 03期
关键词：
amorphous semiconductors; trap level spectroscopy; thermo-stimulated depolarization;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thermally stimulated depolarization currents (TSDC) trap level spectroscopic technique is considered for studying of the corresponding defect states in the mobility gap in high-resistance amorphous Se-based semiconductors.
引用
收藏
页码：484 / 491
页数：8
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