High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-xMnxN -: art. no. 085216

被引：61

作者：

Hwang, JI ^{[1
]}

Ishida, Y

Kobayashi, M

Hirata, H

Takubo, K

Mizokawa, T

Fujimori, A

Okamoto, J

Mamiya, K

Saito, Y

Muramatsu, Y

Ott, H

Tanaka, A

Kondo, T

Munekata, H

机构：

[1] Univ Tokyo, Dept Complex Sci & Engn, Kashiwa, Chiba 2778561, Japan

[2] Univ Tokyo, Dept Phys, Kashiwa, Chiba 2778561, Japan

[3] Japan Atom Energy Res Inst, Synchrotron Radiat Res Ctr, Mikazuki, Hyogo 6795148, Japan

[4] Free Univ Berlin, Inst Expt, D-14195 Berlin, Germany

[5] Hiroshima Univ, Dept Quantum Matter, Higashihiroshima 7398530, Japan

[6] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.72.085216

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the electronic structure of the diluted magnetic semiconductor Ga1-xMnxN (x=0.0, 0.02, and 0.042) grown on Sn-doped n-type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L-edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a MnN4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga1-xMnxN is stronger than that in Ga1-xMnxAs.

引用

页数：6

共 30 条

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