Epitaxial growth and polarization reversal characteristics of hybrid improper ferroelectric Ca3Ti2O7 thin films

被引:1
作者
Ma, X. T. [1 ]
Wang, S. Y. [1 ]
Chen, Chang [1 ]
Jia, Y. D. [1 ]
Liu, W. F. [2 ]
机构
[1] Tianjin Normal Univ, Coll Phys & Mat Sci, Tianjin 300387, Peoples R China
[2] Tianjin Univ, Sch Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金;
关键词
STRAIN;
D O I
10.1063/5.0070911
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Layered perovskite oxides A(3)B(2)O(7) with Ruddlesden-Popper structures have attracted great attention due to their intriguing hybrid improper ferroelectricity. In this work, we prepared high-quality epitaxial Ca3Ti2O7 (CTO) thin films on Nb-SrTiO3 (STO) and Pt-Si substrates by pulsed laser deposition. The epitaxial relationship between the CTO thin film and Nb-STO substrate is [010]CTO//[010]Nb-STO, while the CTO film on Pt-Si is the polycrystalline growth with the preferred orientation of (010). The piezoelectric force microscopy image is attested to the stable existence of ferroelectricity in CTO films at room temperature with different growth patterns. A resistive switching behavior with at least two orders of magnitude is observed in CTO films driven by their ferroelectric polarization reversal. Moreover, a downward self-poling phenomenon is observed in CTO films on different substrates, and the flexoelectric effect induced by the strain gradient is supposed to be the main origin.(c) 2021 Author(s).
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页数:8
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