Design and Fabrication of a Test Chip for 3D Integration Process Evaluation

被引:0
作者
Song, Chongshen [1 ]
Wang, Zheyao [2 ]
Liu, Litian [2 ]
机构
[1] Chinese Acad Sci IMECAS, Inst Microelect, Beijing, Peoples R China
[2] Tsinghua Univ, Inst Microelect, Beijing, Peoples R China
来源
2011 IEEE 61ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2011年
关键词
STRESS SENSORS; SILICON;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Process compatibility evaluation and mechanical stress test are of great importance for 3D integration processes. This paper presents the design and fabrication of a test chip to evaluate a newly developed 3D integration scheme. For CMOS-compatibility evaluation, individual CMOS devices and integrated circuit modules together with through-silicon-vias (TSVs) are designed. To demonstrate the functionality of 3D integration, CMOS loop oscillators comprising 21 stage CMOS inverters located on two separate device wafers and interconnected with TSVs are designed. Mechanical stresses on the device substrate induced by 3D process are quantitatively evaluated by employing a 16x16 CMOS stress sensor array. The electrical performance of the TSVs is also characterized using special test structures. The test chip and its functions can be used to evaluate different 3D TSV processes.
引用
收藏
页码:1764 / 1769
页数:6
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