Interface tailoring for adhesion enhancement of diamond-like carbon thin films

被引：10

作者：

Salvadori, M. C. ^{[1
]}

Teixeira, F. S. ^{[1
]}

Araujo, W. W. R. ^{[1
]}

Sgubin, L. G. ^{[1
]}

Brown, I. G. ^{[2
]}

机构：

[1] Univ Sao Paulo, Inst Phys, BR-05315970 Sao Paulo, Brazil

[2] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

来源：

关键词：

Diamond-like carbon; Interface tailoring; Enhanced adhesion; Ion bombardment; DYNAMIC COMPOSITION CHANGES; IMMERSION ION-IMPLANTATION; AMORPHOUS-CARBON; ARC DEPOSITION; SIMULATION; SCRATCH; VACUUM; STRESS; GROWTH; TRIDYN;

D O I：

10.1016/j.diamond.2012.02.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have explored the suitability and characteristics of interface tailoring as a tool for enhancing the adhesion of hydrogen-free diamond-like carbon (DLC) thin films to silicon substrates. DLC films were deposited on silicon with and without application of an initial high energy carbon ion bombardment phase that formed a broad Si-C interface of gradually changing Si:C composition. The interface depth profile was calculated using the TRIDYN simulation program, revealing a gradient of carbon concentration including a region with the stoichiometry of silicon carbide. DLC films on silicon, with and without interface tailoring, were characterized using Raman spectroscopy, scanning electron microscopy, atomic force microscopy and scratch tests. The Raman spectroscopy results indicated sp3-type carbon bonding content of up to 80%. Formation of a broadened Si:C interface as formed here significantly enhances the adhesion of DLC films to the underlying silicon substrate. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：8 / 12

页数：5

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