Photovoltage induced by ratchet effect in Si/SiGe heterostructures under microwave irradiation

被引：13

作者：

Kannan, E. S. ^{[1
]}

Bisotto, I. ^{[1
]}

Portal, J. -C. ^{[1
,3
,4
]}

Murali, R. ^{[2
]}

Beck, T. J. ^{[2
]}

机构：

[1] CNRS INSA UJF UPS, LNCMI, UPR 3228, F-38042 Grenoble, France

[2] Georgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA

[3] Inst Univ France, F-31077 Toulouse, France

[4] Inst Natl Sci Appl, F-31077 Toulouse, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 19期

关键词：

TRANSPORT; MOBILITY;

D O I：

10.1063/1.3590255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Directed electron transport induced by polarized microwave in Si/SiGe heterostructure is investigated by patterning an array of semicircular antidots in hexagonal geometry. Carriers interact strongly with the asymmetric antidots under microwave radiation and the broken spatial symmetry drives the carriers to move preferably in one direction (ratchet effect), thereby generating a longitudinal photovoltage. In addition to this, the strong electron-electron interaction in Si/SiGe heterostructure favors a collective carrier motion along the sample edges, which gives rise to the transverse photovoltage. Both longitudinal and transverse photovoltage induced by ratchet effect opens up promising possibilities for Si/SiGe based photogalvanic detectors. (C) 2011 American Institute of Physics. [doi:10.1063/1.3590255]

引用

页数：3

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