Cleaved cavity optically pumped InGaN-GaN laser grown on spinel substrates

被引：28

作者：

Khan, MA ^{[1
]}

Sun, CJ ^{[1
]}

Yang, JW ^{[1
]}

Chen, Q ^{[1
]}

Lim, BW ^{[1
]}

Anwar, MZ ^{[1
]}

Osinsky, A ^{[1
]}

Temkin, H ^{[1
]}

机构：

[1] COLORADO STATE UNIV, DEPT ELECT ENGN, FT COLLINS, CO 80523 USA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 16期

关键词：

D O I：

10.1063/1.117656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an optically pumped multiple-quantum-well laser of InGaN-GaN grown on cubic, (111)-oriented spinel substrates. The laser cavity is formed by cleaving. Atomic force microscopy shows that the cleaved GaN and spinel facets are of similar flatness. The onset of lasing is clearly demonstrated by the saturation of spontaneous emission, abrupt line narrowing, and the highly polarized light output. A lasing threshold power of 140 kW/cm(2) is measured in a 400-mu m-long cavity at 150 K. (C) 1996 American Institute of Physics.

引用

页码：2418 / 2420

页数：3

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