Cleaved cavity optically pumped InGaN-GaN laser grown on spinel substrates

被引：28

作者：

Khan, MA ^{[1
]}

Sun, CJ ^{[1
]}

Yang, JW ^{[1
]}

Chen, Q ^{[1
]}

Lim, BW ^{[1
]}

Anwar, MZ ^{[1
]}

Osinsky, A ^{[1
]}

Temkin, H ^{[1
]}

机构：

[1] COLORADO STATE UNIV, DEPT ELECT ENGN, FT COLLINS, CO 80523 USA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 16期

关键词：

D O I：

10.1063/1.117656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an optically pumped multiple-quantum-well laser of InGaN-GaN grown on cubic, (111)-oriented spinel substrates. The laser cavity is formed by cleaving. Atomic force microscopy shows that the cleaved GaN and spinel facets are of similar flatness. The onset of lasing is clearly demonstrated by the saturation of spontaneous emission, abrupt line narrowing, and the highly polarized light output. A lasing threshold power of 140 kW/cm(2) is measured in a 400-mu m-long cavity at 150 K. (C) 1996 American Institute of Physics.

引用

页码：2418 / 2420

页数：3

共 9 条

[1] AMANO H, 1995, MRS 1995 FALL M, P18
[2] CASEY HC, 1978, HETEROSTRUCTURE LASE, P81
[3] VERTICAL-CAVITY, ROOM-TEMPERATURE STIMULATED-EMISSION FROM PHOTOPUMPED GAN FILMS DEPOSITED OVER SAPPHIRE SUBSTRATES USING LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
KHAN, MA
OLSON, DT
VANHOVE, JM
KUZNIA, JN
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (14) : 1515 - 1517
[4] POLARIZATION OF LIGHT FROM AN OPTICALLY PUMPED (AL-GA-N) (GA-IN-N) DOUBLE-HETEROSTRUCTURE
KIM, ST
TANAKA, T
AMANO, H
AKASAKI, I
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 26 (2-3): : L5 - L7
[5] HIGH-QUALITY GAN EPITAXIAL LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY ON (111) MGAL2O4 SUBSTRATE
KURAMATA, A
HORINO, K
DOMEN, K
SHINOHARA, K
TANAHASHI, T
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (17) : 2521 - 2523
[6] OBSERVATION OF NANOPIPES IN ALPHA-GAN CRYSTALS
QIAN, W
SKOWRONSKI, M
DOVERSPIKE, K
ROWLAND, LB
GASKILL, DK
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 151 (3-4) : 396 - 400
[7] Deposition of high quality wurtzite GaN films over cubic (111) MgAl2O4 substrates using low pressure metalorganic chemical vapor deposition
Sun, CJ
Yang, JW
Chen, Q
Khan, MA
George, T
ChangChien, P
Mahajan, S
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (08) : 1129 - 1131
[8] ABOVE ROOM-TEMPERATURE NEAR-ULTRAVIOLET LASING FROM AN OPTICALLY PUMPED GAN FILM GROWN ON SAPPHIRE
YANG, XH
SCHMIDT, TJ
SHAN, W
SONG, JJ
GOLDENBERG, B
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (01) : 1 - 3
[9] SPONTANEOUS AND STIMULATED-EMISSION FROM PHOTOPUMPED GAN GROWN ON SIC
ZUBRILOV, AS
NIKOLAEV, VI
TSVETKOV, DV
DMITRIEV, VA
IRVINE, KG
EDMOND, JA
CARTER, CH
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (04) : 533 - 535

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