Properties of Annealed Atomic-Layer-Deposited Ruthenium from Ru(DMBD)(CO)3 and Oxygen

被引：6

作者：

Hayes, Michael H. ^{[1
]}

Dezelah, Charles L. ^{[2
]}

Conley, John F., Jr. ^{[1
]}

机构：

[1] Oregon State Univ, Dept Elect Engn & Comp Sci, Corvallis, OR 97331 USA

[2] EMD Performance Mat, Haverhill, MA 01832 USA

来源：

SELECTED PROCEEDINGS FROM THE 233RD ECS MEETING | 2018年 / 85卷 / 13期

基金：

美国国家科学基金会;

关键词：

THIN-FILMS; RU-FILMS;

D O I：

10.1149/08513.0743ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effective work function, resistivity and morphology of ruthenium deposited by thermal atomic layer deposition using Ru(DMBD)(CO)(3) and oxygen are investigated. The resistivity and surface roughness are examined before and after annealing in an N-2 ambient at up to 500 degrees C. The average as-deposited resistivity of 16.1 mu Omega-cm is reduced to an average of 13.7 mu Omega-cm after 20 minutes of annealing. Subsequent annealing has no significant impact. GIXRD shows a polycrystalline hexagonal Ru thin film with a slight (001) growth preference as-deposited. AFM pre- and post-anneal revealed the growth of crystallites through a slight roughening of the surface. The effective work function of as-deposited Ru on ALD Al2O3 was determined to be 5.3 eV.

引用

页码：743 / 749

页数：7

共 12 条

[1] Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor [J].

Austin, Dustin Z. ;

Jenkins, Melanie A. ;

Allman, Derryl ;

Hose, Sallie ;

Price, David ;

Dezelah, Charles L. ;

Conley, John F., Jr. .

CHEMISTRY OF MATERIALS, 2017, 29 (03) :1107-1115

[2] PHOTOELECTRIC DETERMINATION OF WORK FUNCTION OF RU-FILMS AS A FUNCTION OF SINTERING TEMPERATURE (78 DEGREES K - 925 DEGREES K) [J].

BOUWMAN, R ;

SACHTLER, WM .

SURFACE SCIENCE, 1971, 24 (01) :140-&

[3] Thermal Atomic Layer Deposition (ALD) of Ru Films for Cu Direct Plating [J].

Choi, Sang-Hyeok ;

Cheon, Taehoon ;

Kim, Soo-Hyun ;

Kang, Dae-Hwan ;

Park, Gye-Soon ;

Kim, Sunjung .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (06) :D351-D356

[4] Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O2 [J].

Eom, Tae-Kwang ;

Sari, Windu ;

Choi, Kyu-Jeong ;

Shin, Woong-Chul ;

Kim, Jae Hyun ;

Lee, Do-Joong ;

Kim, Ki-Bum ;

Sohn, Hyunchul ;

Kim, Soo-Hyun .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (11) :D85-D88

[5] Ru and RuO2 gate electrodes for advanced CMOS technology [J].

Fröhlich, K ;

Husekova, K ;

Machajdik, D ;

Hooker, JC ;

Perez, N ;

Fanciulli, M ;

Ferrari, S ;

Wiemer, C ;

Dimoulas, A ;

Vellianitis, G ;

Roozeboom, F .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 109 (1-3) :117-121

[6] Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Thin Films from a Zero-Valent (1,5-Hexadiene)(1-isopropyl-4-methylbenzene)ruthenium Complex and O2 [J].

Jung, Hyo Jun ;

Han, Jeong Hwan ;

Jung, Eun Ae ;

Park, Bo Keun ;

Hwang, Jin-Ha ;

Son, Seung Uk ;

Kirn, Chang Gyoun ;

Chung, Taek-Mo ;

An, Ki-Seok .

CHEMISTRY OF MATERIALS, 2014, 26 (24) :7083-7090

[7] High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition [J].

Kim, SK ;

Kim, WD ;

Kim, KM ;

Hwang, CS ;

Jeong, J .

APPLIED PHYSICS LETTERS, 2004, 85 (18) :4112-4114

[8] Liner materials for direct electrodeposition of Cu [J].

Lane, MW ;

Murray, CE ;

McFeely, FR ;

Vereecken, PM ;

Rosenberg, R .

APPLIED PHYSICS LETTERS, 2003, 83 (12) :2330-2332

[9]

Nicollian E. H., 1982, MOS PHYS TECHNOLOGY, P481

[10]

Powell R.W., 1962, Platin. Met. Rev, V6, P138

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