Reversible hydrogenation of deuterium-intercalated quasi-free-standing graphene on SiC(0001)

被引：13
|
作者：
Bocquet, F. C. [2 ,3 ]
Bisson, R. [1 ]
Themlin, J. -M. [2 ,3 ]
Layet, J. -M. [1 ]
Angot, T. [1 ]
机构：
[1] Aix Marseille Univ, PIIM, CNRS, UMR 7345, F-13397 Marseille, France
[2] Aix Marseille Univ, IM2NP, F-13397 Marseille, France
[3] CNRS, UMR 7334, F-13397 Marseille, France
来源：
PHYSICAL REVIEW B | 2012年 / 85卷 / 20期
关键词：
EPITAXIAL GRAPHENE; ATOMIC-HYDROGEN; GRAPHITE; ADSORPTION; SURFACES; SPECTROSCOPY; CARBIDE;
D O I：
10.1103/PhysRevB.85.201401
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hydrogenation of deuterium-intercalated quasi-free-standing monolayer graphene on SiC(0001) is obtained and studied with low-energy electron diffraction and high-resolution electron energy loss spectroscopy. While the carbon honeycomb structure remains intact, it is shown that a significant band gap opens in the hydrogenated material. Vibrational spectroscopy evidences for hydrogen chemisorption on the quasi-free-standing graphene is provided and its thermal stability is studied.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Effects of two kinds of intercalated In films on quasi-free-standing monolayer graphene formed above SiC(0001)
    Kim, Hidong
    Tsogtbaatar, Nyamaa
    Tuvdendorj, Bolortsetseg
    Lkhagvasuren, Altaibaatar
    Seo, Jae M.
    CARBON, 2020, 159 : 229 - 235
  • [2] The quasi-free-standing nature of graphene on H-saturated SiC(0001)
    Speck, F.
    Jobst, J.
    Fromm, F.
    Ostler, M.
    Waldmann, D.
    Hundhausen, M.
    Weber, H. B.
    Seyller, Th.
    APPLIED PHYSICS LETTERS, 2011, 99 (12)
  • [3] Formation of quasi-free-standing graphene on SiC(0001) through intercalation of erbium
    Bentley, P. D.
    Bird, T. W.
    Graham, A. P. J.
    Fossberg, O.
    Tear, S. P.
    Pratt, A.
    AIP ADVANCES, 2021, 11 (02)
  • [4] Fabricating Quasi-Free-Standing Graphene on a SiC(0001) Surface by Steerable Intercalation of Iron
    Shen, Kongchao
    Sun, Haoliang
    Hu, Jinping
    Hu, Huinbang
    Liang, Zhaofeng
    Li, Haiyang
    Zhu, Zhiyuan
    Huang, Yaobo
    Kong, Lingyuan
    Wang, Yu
    Jiang, Zheng
    Huang, Han
    Wells, Justin W.
    Song, Fei
    JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 122 (37): : 21484 - 21492
  • [5] The impact of partial H intercalation on the quasi-free-standing properties of graphene on SiC(0001)
    Szary, Maciej J.
    El-Ahmar, Semir
    Ciuk, Tymoteusz
    APPLIED SURFACE SCIENCE, 2021, 541 (541)
  • [6] Enhanced Raman spectra of hydrogen-intercalated quasi-free-standing monolayer graphene on 4H-SiC(0001)
    Grodecki, K.
    Jagiello, J.
    Dobrowolski, A.
    Czolak, D.
    Jozwik, I
    Ciuk, T.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2020, 117
  • [7] Quasi-Free-Standing Epitaxial Graphene on SiC (0001) by Fluorine Intercalation from a Molecular Source
    Wong, Swee Liang
    Huang, Han
    Wang, Yuzhan
    Cao, Liang
    Qi, Dongchen
    Santoso, Iman
    Chen, Wei
    Wee, Andrew Thye Shen
    ACS NANO, 2011, 5 (09) : 7662 - 7668
  • [8] Structure of quasi-free-standing graphene on the SiC (0001) surface prepared by the rapid cooling method
    Sumi, Tatsuya
    Nagai, Kazuki
    Bao, Jianfeng
    Terasawa, Tomo-o
    Norimatsu, Wataru
    Kusunoki, Michiko
    Wakabayashi, Yusuke
    APPLIED PHYSICS LETTERS, 2020, 117 (14)
  • [9] Bifunctional effects of the ordered Si atoms intercalated between quasi-free-standing epitaxial graphene and SiC(0001): graphene doping and substrate band bending
    Kim, Hidong
    Dugerjav, Otgonbayar
    Arvisbaatar, Amarmunkh
    Seo, Jae M.
    NEW JOURNAL OF PHYSICS, 2015, 17
  • [10] Induced growth of quasi-free-standing graphene on SiC substrates
    Liu, Zhenxing
    Su, Zhen
    Li, Qingbo
    Sun, Li
    Zhang, Xue
    Yang, Zhiyuan
    Liu, Xizheng
    Li, Yingxian
    Li, Yanlu
    Yu, Fapeng
    Zhao, Xian
    RSC ADVANCES, 2019, 9 (55) : 32226 - 32231
12345