Performance on GaN-Based Light-Emitting Diodes with Different Substrate Tilt Angles

被引：3

作者：

Liou, Jian-Kai ^{[1
]}

Liu, Yi-Jing ^{[1
]}

Cheng, Shiou-Ying ^{[2
]}

Chou, Po-Cheng ^{[1
]}

Chen, Chiun-Chia ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, 1 Univ Rd, Tainan 70101, Taiwan

[2] Natl Ilad Univ, Dept Elect Engn, Yilan 206, Taiwan

来源：

FRONTIER OF NANOSCIENCE AND TECHNOLOGY | 2011年 / 694卷

关键词：

GaN; electrostatic discharge (ESD); capacitance; ESD CHARACTERISTICS; FILMS; LEDS;

D O I：

10.4028/www.scientific.net/MSF.694.842

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrostatic discharge (ESD) performance of GaN-based light-emitting diodes (LEDs) with naturally-textured p-GaN contact layers grown on c-axis miscut sapphire substrates are studied. During machine model tests, the device grown on a 0.35 degrees miscut sapphire shows the highest ESD tolerance, while the one grown on a 0.2 degrees miscut sapphire exhibits the poorest tolerance. It is discovered that this effect correlates with the presence of maximum capacitance (C-m) values, over the difference in defect densities between LEDs. The variation in C-m values is caused by parasitic capacitance effect induced by different p-GaN surface morphologies between the studied devices. This observation gives us more reliable application in improving ESD performance based on the device grown on a 0.35 degrees miscut sapphire.

引用

页码：842 / +

页数：2