Nondestructive determination of pore size distribution in thin films deposited on solid substrates

被引：70

作者：

Dultsev, FN ^{[1
]}

Baklanov, MR

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

[2] IMEC, Louvain, Belgium

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 04期

关键词：

D O I：

10.1149/1.1390780

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A novel technique of adsorption porometry has been developed which allows us to measure pore size distribution of a thin porous film directly on a solid substrate in a simple way. The most important principle of this technique is the use of in situ ellipsometry to determine the amount of adsorbate adsorbed/condensed in the film. The change of the refractive index (n) and the film thickness (d) is used to estimate the amount. In this paper, we demonstrate measurements of pore size distribution in chemical vapor deposited SiO2 and spin-on xerogel thin films on Si wafers. All measurements were carried out at room temperature. (C) 1999 The Electrochemical Society. S1099-0062(98)08-079-1. All rights reserved.

引用

页码：192 / 194

页数：3

共 10 条

[1] POROUS STRUCTURE OF SIO2-FILMS SYNTHESIZED AT LOW-TEMPERATURE AND PRESSURE [J].

BAKLANOV, MR ;

VASILYEVA, LL ;

GAVRILOVA, TA ;

DULTSEV, FN ;

MOGILNIKOV, KP ;

NENASHEVA, LA .

THIN SOLID FILMS, 1989, 171 (01) :43-52

[2]

BAKLANOV MR, 1988, POVERKHNOST, V11, P1445

[3] Photochemical synthesis of TEMPO-capped initiators for ''living'' free radical polymerization [J].

Connolly, TJ ;

Baldovi, MV ;

Mohtat, N ;

Scaiano, JC .

TETRAHEDRON LETTERS, 1996, 37 (28) :4919-4922

[4]

GREGG SJ, 1982, ADSORPTION SURFACE

[5] ''Living'' free radical polymerization: A unique technique for the preparation of controlled macromolecular architectures [J].

Hawker, CJ .

ACCOUNTS OF CHEMICAL RESEARCH, 1997, 30 (09) :373-382

[6]

Kondoh E, 1998, ELECTROCHEM SOLID ST, V1, P224, DOI 10.1149/1.1390693

[7]

MURANOVA GA, 1993, SOV J OPT TECHNOL+, V60, P91

[8]

Ramos T, 1997, MATER RES SOC SYMP P, V443, P91

[9]

Tolmachev VA, 1998, OPT SPECTROSC+, V84, P584

[10] Ellipsometry for correct determining the void fraction and true refractive index of thin films [J].

Tolmachev, VA .

POLARIMETRY AND ELLIPSOMETRY, 1997, 3094 :288-294

← 1 →