Offset-Compensation High-Performance Sense Amplifier for Low-Voltage DRAM Based on Current Mirror and Switching Point

被引：13

作者：

Huang, Pei ^{[1
]}

Chang, Kuan-Chang ^{[1
]}

Ge, Junlin ^{[2
]}

Peng, Chunyu ^{[2
]}

Wu, Xiulong ^{[2
]}

Chen, Junning ^{[2
]}

Lin, Zhiting ^{[2
]}

机构：

[1] Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China

[2] Anhui Univ, Sch Elect & Informat Engn, Hefei 230601, Peoples R China

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2022年 / 69卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Sensors; Switches; Transistors; Jitter; Inverters; Timing; Random access memory; DRAM; low voltage; offset compensation; sense amplifier; voltage mismatch; FLUCTUATIONS; CIRCUIT; SCHEME;

D O I：

10.1109/TCSII.2022.3143504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The transistor offset from sense amplifiers affects the sensing performance in dynamic random-access memory (DRAM). Although various offset-compensation methods are available, the voltage mismatch remains large, and some methods are susceptible to timing variation. To improve the compensation effect and stability, we propose a current-mirror and switching-point compensation sense amplifier. The amplifier compensates one bit-line voltage to the switching point of an inverter and adjusts the other bit-line by a current mirror during compensation. The configuration is robust against timing variation. Moreover, the voltage of complementary bit line considerably changes due to the high gain of the switching point. Simulation results show that the voltage mismatch can be improved by 90% compared with that of a boosted reference voltage sense amplifier. In addition, the increased bit-line differential voltage can improve the sensing speed. At a low supply voltage of 0.75 V, the sensing yield improves by 11% compared with that of a boosted reference voltage sense amplifier and by 16% compared with that of an offset-cancellation sense amplifier.

引用

页码：2011 / 2015

页数：5

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