Current density effects on the microstructure of zirconium thin films

被引：43

作者：

Islam, Zahabul ^{[1
]}

Wang, Baoming ^{[1
]}

Haque, Aman ^{[1
]}

机构：

[1] Penn State Univ, Dept Mech & Nucl Engn, 314 Leonhard Bldg, University Pk, PA 16802 USA

来源：

SCRIPTA MATERIALIA | 2018年 / 144卷

基金：

美国国家科学基金会;

关键词：

In-situ TEM; Molecular dynamics; Grain growth; Electron wind force; Grain boundary; NANOCRYSTALLINE METALS; MOLECULAR-DYNAMICS; ELECTROMIGRATION; SIMULATION; ALLOYS; STRESS; SIZE;

D O I：

10.1016/j.scriptamat.2017.09.032

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate the effect of electrical current density below the electromigration failure limit in nanocrystalline zirconium thin films using in-situ Transmission Electron Microscope and molecular dynamics simulation. At least one order of magnitude higher growth was seen at current density of 8.5 x 10(5) A/cm(2) (Joule heating temperature 710 K) in 15 min compared to conventional thermal annealing at 873 K for 360 min. Simulation results support our hypothesis that the concurrent effects of electron wind force and Joule heating specifically target the grain boundaries, producing much higher grain boundary mobility compared to high temperature annealing alone. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：18 / 21

页数：4