3 Watt Ka-Band MMIC HPA and driver amplifier implemented in a fully selective 0.15 um power PHEMT process

被引：11

作者：

Komiak, JJ ^{[1
]}

Kong, W ^{[1
]}

Chao, PC ^{[1
]}

Nichols, K ^{[1
]}

机构：

[1] Sanders, Nashua, NH 03061 USA

来源：

GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998 | 1998年

关键词：

D O I：

10.1109/GAAS.1998.722619

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Design and performance of a 0.15 um gate length fully selective recess PHEMT power amplifier that has established a new benchmark for Ka-Band power is reported. The amplifiers average > 3 Watts at 30 % PAE with 13 dB of power gain at 30 GHz, with a 1 dB gain compression output power of > 2.5 Watts. The P1dB output power is 2.5 times the best previously reported result [1] for Ka-Band MMIC Power Amplifiers. A 0.5 Watt at P1dB driver amplifier is also described.

引用

页码：45 / 48

页数：4