Model of c-axis resistivity of high-T-c cuprates

We propose a simple model which accounts for the major features and systematics of experiments on the c,=axis resistivity, p(c) for La-2-xSrxCuO4, YBa(2)Cu(3)0(6+x), and Bi2S2CaCu2O8. We argue that the c-axis resistivity can be separated into contributions from in-plane dephasing and the c-axis ''barrier'' scattering processes, with the low-temperature semiconductorlike behavior of p(c) arising from the suppression of the in-plane density of stares measured by in-plane magnetic Knight shift experiments. We report on predictions for p(c) in impurity-doped YBa2CU3O6+x materials.