High-performance InAs quantum well Hall sensors on germanium substrates

被引：6

作者：

Behet, M

De Boeck, J

Borghs, G

Mijlemans, P

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Union Miniere, Electrooptic Mat, B-2250 Olen, Belgium

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 23期

关键词：

D O I：

10.1049/el:19981540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High quality InAs/Al0.2Ga0.8Sb quantum well structures were grown on Germanium substrates by molecular beam epitaxy. The excellent transport properties resulted in sensitivities of 0.85T(-1) (voltage drive) and 370 V/A/T (current drive) for a cross-shaped sensor at room temperature. The results show that the performance of Hall sensors on germanium and on GaAs substrates is comparable in terms of sensitivity and temperature stability.

引用

页码：2273 / 2274

页数：2

共 3 条

[1] Molecular beam epitaxy and characterization of InAs/Al0.2Ga0.8Sb heterostructures for magnetic sensing applications [J].