Threshold voltage modulation mechanism of AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with fluorinated Al2O3 as gate dielectrics

被引：7

作者：

Chen, Chao ^{[1
]}

Liu, Xingzhao ^{[1
]}

Zhang, Jihua ^{[1
]}

Tian, Benlang ^{[1
]}

Jiang, Hongchuan ^{[1
]}

Zhang, Wanli ^{[1
]}

Li, Yanrong ^{[1
]}

机构：

[1] Univ Electron Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 13期

关键词：

HEMTS; MODE;

D O I：

10.1063/1.3699029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MISHEMTs) were realized by using fluorinated Al2O3 as gate dielectrics. The variations in binding-energy spectrum and valance-band spectrum in fluorinated-Al2O3/AlGaN/GaN are studied in this Letter, providing insights to mechanism underlying drastic threshold voltage (V-th) modulation of AlGaN/GaN MISHEMTs with fluorinated Al2O3 gate dielectrics. It was found that not the surface potential but rather the negative charges in Al2O3 gate dielectrics are the primary factor responsible for conversion from depletion-mode (D-mode) to E-mode AlGaN/GaN MISHEMTs by using fluorinated Al2O3 as gate dielectrics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3699029]

引用

页数：3

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