Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices

被引:20
作者
Lahlalia, Ayoub [1 ]
Le Neel, Olivier [2 ]
Shankar, Ravi [2 ]
Selberherr, Siegfried [1 ]
Filipovic, Lado [1 ]
机构
[1] TU Wien, Inst Microelect, A-1040 Vienna, Austria
[2] STMicroelect Pte Ltd, Singapore 569508, Singapore
关键词
semiconducting metal oxide; gas sensor; microheater; electro-thermal-mechanical simulation; smartphone; ultra-low power; THIN-FILM; RESPONSE CHARACTERISTICS; RELIABILITY; ARRAY;
D O I
10.3390/s19020374
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Semiconducting metal oxide (SMO) gas sensors were designed, fabricated, and characterized in terms of their sensing capability and the thermo-mechanical behavior of the micro-hotplate. The sensors demonstrate high sensitivity at low concentrations of volatile organic compounds (VOCs) at a low power consumption of 10.5 mW. In addition, the sensors realize fast response and recovery times of 20 s and 2.3 min, respectively. To further improve the baseline stability and sensing response characteristics at low power consumption, a novel sensor is conceived of and proposed. Tantalum aluminum (TaAl) is used as a microheater, whereas Pt-doped SnO2 is used as a thin film sensing layer. Both layers were deposited on top of a porous silicon nitride membrane. In this paper, two designs are characterized by simulations and experimental measurements, and the results are comparatively reported. Simultaneously, the impact of a heat pulsing mode and rubber smartphone cases on the sensing performance of the gas sensor are highlighted.
引用
收藏
页数:14
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