Simulation study of thermal effects in bistable laser diodes

被引：0

作者：

Madhan, MG ^{[1
]}

Vaya, PR

Gunasekaran, N

机构：

[1] Anna Univ, Sch Elect & Commun Engn, Madras 600025, Tamil Nadu, India

[2] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2001年 / 31卷 / 03期

关键词：

semiconductor laser; optical bistability; thermal effects; circuit simulation;

D O I：

10.1002/mop.1405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of temperature on the hysterisis behavior; threshold current, and threshold voltage of a bistable laser diode are studied by simulating its equivalent electrical circuit, developed from the rate equations. Simulations are carried out using the circuit analysis program PSPICE. The study shows that the forward threshold current, hystersis width, and threshold voltage vary exponentially with temperature. Further, the transient temperature variation in the active region due to pulsed input is also analyzed. (C) 2001 John Wiley & Sons, Inc.

引用

页码：233 / 237

页数：5

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