Comparison of Junctionless and Conventional Trigate Transistors With Lg Down to 26 nm

被引：260

作者：

Rios, R. ^{[1
]}

Cappellani, A. ^{[1
]}

Armstrong, M. ^{[1
]}

Budrevich, A. ^{[1
]}

Gomez, H. ^{[1
]}

Pai, R. ^{[1
]}

Rahhal-orabi, N. ^{[1
]}

Kuhn, K. ^{[1
]}

机构：

[1] Intel Corp, Technol & Mfg Grp, Hillsboro, OR 97124 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 09期

关键词：

Accumulation mode; inversion mode (IM); trigate;

D O I：

10.1109/LED.2011.2158978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Junctionless accumulation-mode (JAM) devices with channel lengths L-g down to 26 nm were fabricated on a trigate process and compared to conventional inversion-mode (IM) devices. This letter represents the first experimental comparison of short-channel JAM-to-IM devices at matched OFF-state leakage (I-off). The JAM devices show better channel mobility (when moderately doped) and lower gate capacitance than the IM control counterparts at matched I-off. However, the JAMdevices also show reduced gate control and degraded short-channel characteristics. The observed degraded behavior of JAM relative to IM is explained with the aid of device simulations and a simple analytic model of the channel charge.

引用

页码：1170 / 1172

页数：3

共 5 条

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Razavi, Pedrarn
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