Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations

被引：0

作者：

Endoh, Akira ^{[1
]}

Watanabe, Issei ^{[1
]}

Mimura, Takashi ^{[1
,2
]}

Matsui, Toshiaki ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

[2] Fujitsu Labs Ltd, Kanagawa 2430197, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 10期

关键词：

HEMTS; F(T); GHZ;

D O I：

10.1143/JJAP.50.104302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We performed two-dimensional Monte Carlo (MC) simulations of 50-nm-gate InP-based lattice-matched In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) and clarified the effect of gate-recess structure on electron transport. To understand the electron transport in the recessed-gate HEMTs, we used two parameters in the MC simulations: the lateral recess length l(re) and recess depth d(re). When dre is constant, the electron velocity in the channel layer under the gate electrode increases with decreasing l(re). On the other hand, when l(re) is constant, the electron velocity in the channel under the gate increases with increasing d(re). The electron velocity increases when the steepness of the lateral potential profiles in the InGaAs channel around the drain-side end of the gate electrode increases. (C) 2011 The Japan Society of Applied Physics

引用

页数：5