Thermally activated magnetization back-hopping based true random number generator in nano-ring magnetic tunnel junctions

被引:11
作者
Qin, Jianying [1 ]
Wang, Xiao [1 ]
Qu, Tao [2 ]
Wan, Caihua [1 ]
Huang, Li [1 ]
Guo, Chenyang [1 ]
Yu, Tian [3 ]
Wei, Hongxiang [1 ]
Han, Xiufeng [1 ]
机构
[1] Univ Chinese Acad Sci, Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Univ Minnesota Twin Cities, Sch Phys & Astron, Minneapolis, MN 55455 USA
[3] Sichuan Univ, Coll Phys Sci & Technol, Chengdu 610065, Sichuan, Peoples R China
基金
中国国家自然科学基金;
关键词
TORQUE;
D O I
10.1063/1.5077025
中图分类号
O59 [应用物理学];
学科分类号
摘要
A true random number generator based on the magnetization backhopping process in nano-ring magnetic tunnel junctions is demonstrated in this work. The impact of environmental temperature (T) and current pulse width (tau) on backhopping is investigated statistically by experiments, micromagnetic simulations, and theoretical analysis. The backhopping probability increases at high T and wide tau, as explained by the combined effect of thermal fluctuation and spin-transfer-torque noise. The magnetoresistance at backhopping is randomly distributed over a large operational current range. This manifestation of backhopping in magnetic tunnel junctions can be used as the basic unit of a true random number generator. Published under license by AIP Publishing.
引用
收藏
页数:5
相关论文
共 47 条
[1]  
Ankur D., 2014, IJCA P INT C ADV COM, P19
[2]  
[Anonymous], AAPPS B
[3]   Emission of spin waves by a magnetic multilayer traversed by a current [J].
Berger, L .
PHYSICAL REVIEW B, 1996, 54 (13) :9353-9358
[4]   Phase diagrams of MgO magnetic tunnel junctions including the perpendicular spin-transfer torque in different geometries [J].
Bernert, K. ;
Sluka, V. ;
Fowley, C. ;
Lindner, J. ;
Fassbender, J. ;
Deac, A. M. .
PHYSICAL REVIEW B, 2014, 89 (13)
[5]  
Bouvier Y., 2014, IMS, P1109
[6]   THERMAL FLUCTUATIONS OF A SINGLE-DOMAIN PARTICLE [J].
BROWN, WF .
PHYSICAL REVIEW, 1963, 130 (05) :1677-+
[7]   Source-Independent Quantum Random Number Generation [J].
Cao, Zhu ;
Zhou, Hongyi ;
Yuan, Xiao ;
Ma, Xiongfeng .
PHYSICAL REVIEW X, 2016, 6 (01)
[8]  
Choi WH, 2014, INT EL DEVICES MEET
[9]   Single-shot time-resolved measurements of nanosecond-scale spin-transfer induced switching: Stochastic versus deterministic aspects [J].
Devolder, T. ;
Hayakawa, J. ;
Ito, K. ;
Takahashi, H. ;
Ikeda, S. ;
Crozat, P. ;
Zerounian, N. ;
Kim, Joo-Von ;
Chappert, C. ;
Ohno, H. .
PHYSICAL REVIEW LETTERS, 2008, 100 (05)
[10]   Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM [J].
Dorrance, Richard ;
Alzate, Juan G. ;
Cherepov, Sergiy S. ;
Upadhyaya, Pramey ;
Krivorotov, Ilya N. ;
Katine, Jordan A. ;
Langer, Juergen ;
Wang, Kang L. ;
Amiri, Pedram Khalili ;
Markovic, Dejan .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (06) :753-755