A Broadband Tunable Multilayer Substrate Integrated Waveguide Phase Shifter

被引:28
作者
Muneer, Badar [1 ]
Qi, Zhu [1 ]
Xu Shanjia [1 ]
机构
[1] Univ Sci & Technol China, Chinese Acad Sci, Key Lab Electromagnet Space Informat, Hefei 230017, Peoples R China
基金
中国国家自然科学基金;
关键词
Multilayer; phase shifter; PIN diode; substrate integrated waveguide (SIW); EQUIVALENT-CIRCUIT MODEL; DESIGN;
D O I
10.1109/LMWC.2015.2400923
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel low loss, electronically controllable two-layer substrate integrated waveguide (SIW) phase shifter is presented in this letter. Wideband coupling between two layers ensures the wide bandwidth. PIN diodes are used to achieve electronic control of phase shifter. An equivalent circuit model for this device is developed and explained. A compact and low loss five-level digital phase shifter using the proposed structure is designed, fabricated and measured. The simulated results excellently agree with measured results. Including the microstrip-to-SIW transitions, the measured insertion loss is <= 1.5 dB over desired frequency band, with an amplitude and phase imbalance of +/- 0.4 dB +/- 4 degrees, respectively. Return loss performance of better than 15 dB is observed from 10 to 14 GHz, providing a wide relative bandwidth of around 33%. Measured results validate better performance compared to its SIW counterparts.
引用
收藏
页码:220 / 222
页数:3
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