PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 THIN FILM ON Pt/Ti/SiO2/Si SUBSTRATE

被引：1

作者：

Fan, Suhua ^{[1
]}

Che, Quande ^{[1
]}

Zhang, Fengqing ^{[1
]}

机构：

[1] Shandong Jianzhu Univ, Coll Mat Sci & Technol, Jinan 250101, Peoples R China

来源：

SURFACE REVIEW AND LETTERS | 2010年 / 17卷 / 5-6期

基金：

中国国家自然科学基金;

关键词：

Ferroelectric thin film; Ca0.4Sr0.6Bi4Ti4O15; orientation; ELECTRICAL-PROPERTIES;

D O I：

10.1142/S0218625X10014351

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I-(200)/I-(119) = 1.60 was prepared by preannealing the film at 400 degrees C for 3 min followed by rapid thermal annealing at 800 degrees C for 5min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 mu C/cm(2) and 85 kV/cm, respectively.

引用

页码：445 / 449

页数：5

共 13 条

[11] FERROELECTRIC MEMORIES
SCOTT, JF
DEARAUJO, CAP
[J]. SCIENCE, 1989, 246 (4936) : 1400 - 1405
[12] Large remnant polarization and excellent fatigue property of vanadium-doped SrBi4Ti4O15 thin films
Sun, Hui
Zhu, Jun
Fang, Hong
Chen, Xiao-bing
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (07)
[13] Thickness effects on physical and ferroelectric properties of Bi3.35La0.85Ti3O12 (BLT) films with c-axis-preferred and random orientations
Yeom, SJ
Yang, WS
Kim, NK
Kweon, SY
Choi, ES
Roh, JS
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (2B): : L182 - L185

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