Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry

被引：33

作者：

Hofmann, T. ^{[1
,2
]}

Boosalis, A. ^{[1
,2
]}

Kuehne, P. ^{[1
,2
]}

Herzinger, C. M. ^{[3
]}

Woollam, J. A. ^{[3
]}

Gaskill, D. K. ^{[4
]}

Tedesco, J. L. ^{[4
]}

Schubert, M. ^{[1
,2
]}

机构：

[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[2] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE USA

[3] JA Woollam Co Inc, Lincoln, NE 68508 USA

[4] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 04期

基金：

美国国家科学基金会;

关键词：

GAS;

D O I：

10.1063/1.3548543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report noncontact, optical determination of free-charge carrier mobility, sheet density, and resistivity parameters in epitaxial graphene at room temperature using terahertz and midinfrared ellipsometry and optical-Hall effect measurements. The graphene layers are grown on Si- and C-terminated semi-insulating 6H silicon carbide polar surfaces. Data analysis using classical Drude functions and multilayer modeling render the existence of a p-type channel with different sheet densities and effective mass parameters for the two polar surfaces. The optically obtained parameters are in excellent agreement with results from electrical Hall effect measurements. (c) 2011 American Institute of Physics. [doi:10.1063/1.3548543]

引用

页数：3

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