Self-Powered Visible-Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes

被引：57

作者：

Ahn, Jongtae ^{[1
,3
]}

Kang, Ji-Hoon ^{[1
]}

Kyhm, Jihoon ^{[4
]}

Choi, Hyun Tae ^{[1
]}

Kim, Minju ^{[3
]}

Ahn, Dae-Hwan ^{[1
]}

Kim, Dae-Yeon ^{[1
]}

Ahn, Il-Ho ^{[4
]}

Park, Jong Bae ^{[5
]}

Park, Soohyung ^{[6
]}

Yi, Yeonjin ^{[3
]}

Song, Jin Dong ^{[1
,2
]}

Park, Min-Chul ^{[1
,2
]}

Im, Seongil ^{[3
]}

Hwang, Do Kyung ^{[1
,2
]}

机构：

[1] Korea Inst Sci & Technol, Postsilicon Semicond Inst, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea

[2] Univ Sci & Technol, KIST Sch, Div Nano & Informat Technol, Seoul 02792, South Korea

[3] Yonsei Univ, Inst Phys & Appl Phys, Seoul 03722, South Korea

[4] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 04620, South Korea

[5] Korea Basic Sci Inst, Jeonju Ctr, Jeonju 54907, Jeonbuk, South Korea

[6] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 02792, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2020年 / 12卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

2D MoTe2; 2D MoS2; semivertical geometry; heterojunction photodiode; visible-invisible multiband detection and imaging; WAALS; TRANSITION; OPTOELECTRONICS;

D O I：

10.1021/acsami.9b22288

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Two-dimensional (2D) van der Waals (vdW) heterostructures herald new opportunities for conducting fundamental studies of new physical/chemical phenomena and developing diverse nanodevice applications. In particular, vdW heterojunction p-n diodes exhibit great potential as high-performance photodetectors, which play a key role in many optoelectronic applications. Here, we report on 2D MoTe2/MoS2 multilayer semivertical vdW heterojunction p-n diodes and their optoelectronic application in self-powered visible-invisible multiband detection and imaging. Our MoTe2/MoS2 p-n diode exhibits an excellent electrical performance with an ideality factor of less than 1.5 and a high rectification (ON/OFF) ratio of more than 10(4). In addition, the photodiode exhibits broad spectral photodetection capability over the range from violet (405 nm) to near-infrared (1310 nm) wavelengths and a remarkable linear dynamic range of 130 dB within an optical power density range of 10(-5) to 1 W/cm(2) in the photovoltaic mode. Together with these favorable static photoresponses and electrical behaviors, very fast photo- and electrical switching behaviors are clearly observed with negligible changes at modulation frequencies greater than 100 kHz. In particular, inspired by the photoswitching results for periodic red (638 nm) and near-infrared (1310 nm) illumination at 100 kHz, we successfully demonstrate a prototype self-powered visible-invisible multiband image sensor based on the MoTe2/MoS2 p-n photodiode as a pixel. Our findings can pave the way for more advanced developments in optoelectronic systems based on 2D vdW heterostructures.

引用

页码：10858 / 10866

页数：9

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