CALCULATING THE NOISE PERFORMANCE OF A Ge-ON-Si SCHOTTKY PHOTODETECTOR

被引：0

作者：

Dutta, Himadri Sekhar ^{[2
]}

Das, N. R. ^{[1
]}

机构：

[1] Univ Calcutta, Inst Radio Phys & Elect, Kolkata 700009, India

[2] Univ Calcutta, AK Choudhury Sch Informat Technol, Kolkata 700009, India

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2011年 / 53卷 / 01期

关键词：

Schottky photodetector; resonant cavity; enhanced noise equivalent; bandwidth dark current; minimum detectable power; HIGH-SPEED; RECOMBINATION; PHOTODIODE; BANDWIDTH;

D O I：

10.1002/mop.25623

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We peseta here, a study on the noise performance of a Ge on Si resonant emits enhanced schottky photodetector (PD) The present model for noise includes the effect of confinement of earl wry at the SilGe heterointerface Noise equivalent bandwidth dark current and minimum detectable power are computed The results slum that suitable choice. of device dimensions and bias can be used to improve the noise performance of the PD in presence of heterointerface confinement (C) 2010 Wiley Periodicals Inc Microwave Opt Technol Lett 53 5-10 2011 View this article online it wileyonlinelibrary com DOI 10 1002/mop 25623

引用

页码：5 / 10

页数：6

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