High dose MeV oxygen ion implantation into SiC

被引：19

作者：

Wesch, W

Heft, A

Hobert, H

Peiter, G

Wendler, E

Bachmann, T

机构：

[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

[2] Friedrich Schiller Univ, Inst Phys Chem, D-07743 Jena, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 141卷 / 1-4期

关键词：

wave guides; SiC; ion implantation;

D O I：

10.1016/S0168-583X(98)00184-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

By high-dose MeV oxygen implantation into 6H-SiC bulk crystals at temperatures between 650 degrees C and 700 degrees C buried SiC-SiOx layers were produced. In the infrared and visible region these layers exhibit a refractive index which is significantly reduced with respect to the virgin SIC making them useable as cladding layers for SIC waveguides. For the first time waveguiding at lambda = 633 nm was demonstrated after annealing such an ion implanted SiC-SiO, layer system. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：160 / 163

页数：4

共 13 条

[1] RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide
Barradas, NP
Jeynes, C
Jackson, SM
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 : 1168 - 1171
[2] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances
Bruggeman, DAG
[J]. ANNALEN DER PHYSIK, 1935, 24 (07) : 636 - 664
[3] Choyke W.J., 1985, HDB OPTICAL CONSTANT
[4] DANNBERG P, COMMUNICATION
[5] Gartner K., 1988, HIGH ENERGY ION BEAM
[6] Damage production and annealing of ion implanted silicon carbide
Heft, A
Wendler, E
Heindl, J
Bachmann, T
Glaser, E
Strunk, HP
Wesch, W
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 113 (1-4) : 239 - 243
[7] QUANTITATIVE-ANALYSIS OF THE EFFECT OF DISORDER-INDUCED MODE-COUPLING ON INFRARED-ABSORPTION IN SILICA
KIRK, CT
[J]. PHYSICAL REVIEW B, 1988, 38 (02) : 1255 - 1273
[8] LIN YM, 1993, IEEE PHOTONIC TECH L, V5, P704
[9] NAMAVER F, 1989, MATER RES SOC S P, V128, P632
[10] OPTICAL WAVE-GUIDE FORMED BY CUBIC SILICON-CARBIDE ON SAPPHIRE SUBSTRATES
TANG, X
WONGCHOTIGUL, K
SPENCER, MG
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (09) : 917 - 918

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