Soft breakdown on deep sub-micrometer RF nMOSFET performance

被引：0

作者：

Liu, Y ^{[1
]}

Sadat, A ^{[1
]}

Yuan, JS ^{[1
]}

Yang, H ^{[1
]}

机构：

[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Orlando, FL 32816 USA

来源：

EDMO2003: 11TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2003年

关键词：

soft break-down; gate capacitance; analytical equation of cut-off frequency; LC oscillator; oscillation frequency;

D O I：

10.1109/EDMO.2003.1260006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Soft Breakdown stress on CMOS RF devices has been examined. The total gate capacitance decreases with stress. The analytical equation of cut-off frequency including the gate oxide breakdown is derived. The effect of soft break-down on the performance of an LC oscillator is examined The oscillation frequency of the LC oscillator increases after soft break-down stress.

引用

页码：122 / 127

页数：6