Soft breakdown on deep sub-micrometer RF nMOSFET performance

被引：0
|
作者：
Liu, Y [1 ]
Sadat, A [1 ]
Yuan, JS [1 ]
Yang, H [1 ]
机构：
[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Orlando, FL 32816 USA
来源：
EDMO2003: 11TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2003年
关键词：
soft break-down; gate capacitance; analytical equation of cut-off frequency; LC oscillator; oscillation frequency;
D O I：
10.1109/EDMO.2003.1260006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Soft Breakdown stress on CMOS RF devices has been examined. The total gate capacitance decreases with stress. The analytical equation of cut-off frequency including the gate oxide breakdown is derived. The effect of soft break-down on the performance of an LC oscillator is examined The oscillation frequency of the LC oscillator increases after soft break-down stress.
引用
收藏
页码：122 / 127
页数：6
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