Carbon nanotube resonant-tunneling diodes as terahertz oscillators

被引：3

作者：

Dragoman, M ^{[1
]}

Dragoman, D ^{[1
]}

机构：

[1] Natl Inst Res & Dev Microtechnol, IMT, Bucharest, Romania

来源：

2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/SMICND.2003.1251348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presents the simulation and the implementation of a resonant tunneling diode based on a single-walled carbon nanotube that oscillates at THz frequencies. This device exceeds the performances of similar resonant tunneling devices based on semiconductor heterostructures.

引用

页码：75 / 78

页数：4